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参数资料
| 型号： | FDS8928A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 2/12页 |
| 文件大小： | 285K |
| 代理商： | FDS8928A |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
N-Ch
30
V
P-Ch
-20
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
N-Ch
32
mV/
o
C
P-Ch
-23
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
P-Ch
-1
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
All
100
nA
Gate - Body Leakage, Reverse
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
GS
= 4.5 V, I
D
= 5.5 A
V
GS
= 2.5 V, I
D
= 4.5 A
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= -2.5 V, I
D
= -3.4 A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 5.5 A
V
DS
= -5 V, I
D
= -4 A
N-Ch
0.4
0.67
1
V
P-Ch
-0.4
-0.6
-1
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
N-Ch
-3
mV/
o
C
P-Ch
4
R
DS(ON)
Static Drain-Source On-Resistance
N-Ch
0.025
0.03
0.031
0.038
P-Ch
0.043
0.055
0.059
0.072
I
D(on)
On-State Drain Current
N-Ch
20
A
P-Ch
-20
g
FS
Forward Transconductance
N-Ch
20
S
P-Ch
13
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
900
pF
P-Ch
1130
C
oss
Input Capacitance
N-Ch
410
pF
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Ch
480
C
rss
Reverse Transfer Capacitance
N-Ch
110
pF
P-Ch
120
FDS8928A Rev. B
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PDF描述 |
|---|---|
| FDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8934 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8935 | 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8936 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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