参数资料
型号: FDS8928A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述: 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: SOIC-8
文件页数: 4/12页
文件大小: 285K
代理商: FDS8928A
FDS8928A Rev. B
Typical Electrical Characteristics: N-Channel
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = 4.5 V
I = 5.5 A
R
D
1
2
3
4
5
0
0.025
0.05
0.075
0.1
V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = 3A
T = 125°C
0
0.5
1
1.5
2
2.5
3
0
4
8
12
16
20
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V =5V
T = -55°C
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
20
I
S
A
25°C
-55°C
V = 0V
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
6
12
18
24
30
0.8
1.2
1.6
2
I , DRAIN CURRENT (A)
D
V = 2.0V
R
D
2.5 V
4.5V
3.0V
3.5 V
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0
6
12
18
24
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
2.5V
1.5V
3.0V
2.0V
V = 4.5V
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参数描述
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