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参数资料
| 型号： | FDS8928A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 285K |
| 代理商： | FDS8928A |
FDS8928A Rev. B
Typical Electrical Characteristics: N-Channel
(continued)
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
0
5
10
15
20
25
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 5.5A
10V
15V
V = 5V
0.1
0.2
0.5
V , DRAI N-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.03
0.1
0.3
1
3
10
50
I
D
RDS(ON) LIMIT
V = 4.5V
SINGLE PULSE
R =135 °C/W
T = 25°C
A
DC
1s
10ms
100ms
10s
100us
0.1
0.4
1
2
5
10
30
30
80
200
500
1000
3000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
0.01
0.1
0.5
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =135 °C/W
T = 25°C
A
JA
相关PDF资料 |
PDF描述 |
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| FDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8936S | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8934 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8934A | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8935 | 功能描述:MOSFET -80V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8936 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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