- 您现在的位置：买卖IC网 > PDF目录375785 > FDS8936S (FAIRCHILD SEMICONDUCTOR CORP) Dual N-Channel Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | FDS8936S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 269K |
| 代理商： | FDS8936S |
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
29
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-5.4
mV /
o
C
V
DS
= V
GS
, I
D
= 250 μA
1
2.4
3
V
T
J
=125°C
0.8
1.55
4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 5 A
0.033
0.04
T
J
=125°C
0.049
0.064
I
D(ON)
g
FS
DYNAMIC CH ARACTERISTICS
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 5 A
20
A
Forward Transconductance
8.5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
500
pF
Output Capacitance
350
pF
Reverse Transfer Capacitance
120
pF
t
D(on)
t
r
Turn - On Delay Time
V
DS
= 10 V, I
D
= 1 A
V
GS
= 10 V , R
GEN
= 6
7
14
ns
Turn - On Rise Time
13
23
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - Off Delay Time
16
28
Turn - Off Fall Time
8
16
Total Gate Charge
V
DS
= 10 V, I
D
= 5 A,
V
GS
= 10 V
14.6
20
nC
Gate-Source Charge
3
Gate-Drain Charge
4.5
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.75
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDS8936S Rev.C
c. 135
copper.
O
C/W on a 0.003 in
2
pad of 2oz
b. 125
O
C/W on a 0.02 in
2
pad of 2oz
copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz
copper.
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8947A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958 | Dual N & P-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8947A | 功能描述:MOSFET SO-8 DUAL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8949 | 功能描述:MOSFET 40V 6A 29OHM DUAL NCH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8949 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDS8949_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench? MOSFET |
| FDS8949_F085 | 功能描述:MOSFET N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。