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参数资料
| 型号： | FDS8936S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 269K |
| 代理商： | FDS8936S |
FDS8936S Rev.C
0
1
2
3
4
5
0
5
10
15
20
25
V , DRAIN-SOURCE VOLTAGE (V)
I
D
VGS
5.5
5.0
4.5
4.0
3.5
6.0
7.0
0
5
10
15
20
25
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = 4.0V
7.0
6.0
5.0
4.5
5.5
10
R
D
)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V =10 V
I = 5.0 A
R
D
Figure 3. On-Resistance Variation with
Temperature
.
1
2
3
4
5
6
0
5
10
15
20
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 10V
A
Figure 5 . Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
20
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V = 0V
Figure 6 . Body Diode Forward Voltage
Variation with Source Current and
Temperature.
2
4
6
8
10
0
0.1
0.2
0.3
0.4
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 125°C
T = 25°C
I = 5.0A
Figure 4 . On Resistance
Variation with
Gate-to-Source Voltage.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8947A | 功能描述:MOSFET SO-8 DUAL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8949 | 功能描述:MOSFET 40V 6A 29OHM DUAL NCH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8949 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDS8949_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench? MOSFET |
| FDS8949_F085 | 功能描述:MOSFET N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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