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参数资料
| 型号： | FDS8936S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 269K |
| 代理商： | FDS8936S |
FDS8936S Rev.C
0
5
10
15
20
25
0
5
10
15
Q , GATE CHARGE (nC)
V
G
I = 5.0A
10V
20V
V = 5V
0.1
0.2
0.5
V , DRAI N-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.1
0.5
1
5
10
20
50
I
D
DC
1s
10s
10ms
100ms
1ms
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R =See Note1c
T = 25°C
100us
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (sec)
P
SINGLE PULSE
R =See Note 1C
T = 25°C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.5
1
2
5
10
30
50
100
200
500
1000
1500
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
C ss
f = 1 MHz
V = 0V
C ss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical And Thermal Characteristics
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change
depending on the circuit board design.
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PDF描述 |
|---|---|
| FDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8936A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| FDS8947A | Dual P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| FDS8958 | Dual N & P-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8947A | 功能描述:MOSFET SO-8 DUAL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8949 | 功能描述:MOSFET 40V 6A 29OHM DUAL NCH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8949 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDS8949_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench? MOSFET |
| FDS8949_F085 | 功能描述:MOSFET N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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