- 您现在的位置：买卖IC网 > PDF目录375785 > FDS8978 (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDS8978 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 6.9 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 439K |
| 代理商： | FDS8978 |
F
FDS8978 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 7.5A, V
GS
= 10V
I
D
= 6.9A, V
GS
= 4.5V
I
D
= 7.5A, V
GS
= 10V,
T
A
= 150
o
C
1.2
-
-
-
2.5
0.018
0.021
V
r
DS(ON)
Drain to Source On Resistance
0.014
0.017
-
0.022
0.029
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
907
191
112
1.2
17
9
2.3
1.5
3.3
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
f = 1MHz
V
GS
=10V
V
GS
= 5V
4.0
26
14
-
-
-
Q
g
Total Gate Charge
V
DD
= 15V
I
D
= 7.5A
-
Q
gs
Q
gs2
Q
gd
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
-
-
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
V
DD
= 15V, I
D
= 7.5A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
44
7
37
48
24
72
66
10.5
55.5
72
36
108
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
I
SD
= 7.5A
I
SD
= 2.1A
I
SD
= 7.5A, dI
SD
/dt=100A/
μ
s
I
SD
= 7.5A, dI
SD
/dt=100A/
μ
s
-
-
-
-
-
-
1.25
1.0
25
13
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
19
10
Notes:
1:
Starting T
J
= 25°C, L = 1mH, I
= 7.5A, V
DD
= 30V, V
= 10V.
2:
R
θ
JA
is 78
o
C/W when mounted on a 0.5 in
2
copper pad on FR-4 at 100 seconds.
3:
R
θ
JA
is 191
C/W when mounted on a 0.027 in
copper pad on FR-4 at 1000 seconds.
4:
R
θ
JA
is 228
o
C/W when mounted on a 0.006 in
2
copper pad on FR-4 at 1000 seconds.
相关PDF资料 |
PDF描述 |
|---|---|
| FDS9400A | 30V P-Channel PowerTrench MOSFET |
| FDS9400 | 30V P-Channel PowerTrench MOSFET |
| FDS9412 | Single N-Channel Enhancement Mode Field Effect Transistor |
| FDS9431 | P-Channel 2.5V Specified MOSFET |
| FDS9431A | P-Channel 2.5V Specified MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8978_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8978_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET |
| FDS8978_F123 | 功能描述:MOSFET 30V N-CHAN 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8984 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8984_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
发布紧急采购，3分钟左右您将得到回复。