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参数资料
| 型号： | FDS9412 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 230K |
| 代理商： | FDS9412 |
April 2000
2000 Fairchild Semiconductor Corporation
FDS9412 Rev D(W)
FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
advanced
These devices are particularly suited for low voltage
applications such as notebook computer DC-DC
converter where fast switching, low conduction loss and
high efficiency are needed.
Features
7.9 A, 30 V.
R
DS(ON)
= 22 m
@ V
GS
= 10 V
R
DS(ON)
= 36 m
@ V
GS
= 4.5 V
Very low gate charge.
High switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
20
7.9
24
2.5
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS9412
FDS9412
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS9431 | P-Channel 2.5V Specified MOSFET |
| FDS9431A | P-Channel 2.5V Specified MOSFET |
| FDS9435A | Single P-Channel Enhancement Mode Field Effect Transistor |
| FDS9926A | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDS9933A | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9412 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS9412A | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9431 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS9431A | 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9431A_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified MOSFET |
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