参数资料
型号: FDS9412
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Single N-Channel Enhancement Mode Field Effect Transistor
中文描述: 7900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SO-8
文件页数: 4/8页
文件大小: 230K
代理商: FDS9412
FDS9412 Rev D(W)
Typical Characteristics
0
2
4
6
8
10
0
3
6
9
12
15
Q
g
, GATE CHARGE (nC)
I
D
= 8.4A
V
DS
= 5V
15V
10V
0
300
600
900
1200
1500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (SEC)
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 125 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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