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参数资料
| 型号： | FDS9400A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 3400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 165K |
| 代理商： | FDS9400A |
FDS9400A Rev B1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
μ
A
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–23
mV/
°
C
V
DS
= –24 V,
V
GS
= 25 V,
V
GS
= –25 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
NA
NA
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V,
I
D
= –1.0 A
V
GS
= –4.5 V,
I
D
= –0.5 A
V
GS
= –10 V, I
D
= –1.0 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.4 A
–1
–1.8
–3
V
Gate Threshold Voltage
4
mV/
°
C
105
157
147
130
200
210
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–5
A
S
4.5
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
205
55
26
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
4.5
12.5
11
2
2.4
1.0
0.7
9
23
20
4
3.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15 V,
V
GS
= –5 V
I
D
= –1 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
A
V
SD
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.8
–1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDS9431 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS9431A | 功能描述:MOSFET SO-8 SGL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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