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参数资料
| 型号： | FDS9936A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 416K |
| 代理商： | FDS9936A |
FDS9936A Rev.B
0
0.5
1
1.5
2
2.5
3
0
4
8
12
16
20
V , DRAIN-SOURCE VOLTAGE (V)
I
D
3.5V
3.0V
4.0V
V = 10V
5.5V
4.5V
0
5
10
15
20
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = 3.5V
R
D
10V
4.5 V
6.0V
5.0V
4.0 V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
R
D
V = 10V
I = 5.5A
Figure 3. On-Resistance Variation with
Temperature
.
1
2
3
4
5
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I
D
V =5.0V
J
125°C
25°C
Figure 5. Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
40
I
25°C
-55°C
V = 0V
S
TJ
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2
4
6
8
10
0
0.05
0.1
0.15
0.2
V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = 3A
T = 125°C
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9945 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes |
| FDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CHANNEL MOSFET, 60V, SOIC |
| FDS9945_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9945-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS9945 Series 60 V 100 mOhm N-Channel PowerTrench Mosfet- SOIC-8 |
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