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| 型号： | FDT86244 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 2.8A SOT-223 |
| 标准包装： | 4,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 128 毫欧 @ 2.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 395pF @ 75V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
May 2011
FDT86244
N-Channel Power Trench ? MOSFET
150 V, 2.8 A, 128 m Ω
Features
Max r DS(on) = 128 m Ω at V GS = 10 V, I D = 2.8 A
Max r DS(on) = 178 m Ω at V GS = 6 V, I D = 2.4 A
High performance trench technology for extremely low r DS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench ? process that has
been optimized for r DS(on) , switching performance and
ruggedness.
Applications
Load Switch
Primary Switch
D
D
S
D
SOT-223
G
G
D
S
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
150
±20
Units
V
V
I D
E AS
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
(Note 1a)
(Note 3)
2.8
12
12
A
mJ
P D
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1b)
2.2
1.0
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
12
55
°C/W
Package Marking and Ordering Information
Device Marking
86244
Device
FDT86244
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
?2011 Fairchild Semiconductor Corporation
FDT86244 Rev.C
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FDT86246 | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT86256 | 功能描述:MOSFET 150V NCh MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT-B3RX-QFN16 | 制造商:FuDaTong 功能描述: |
| FDTC-08M-COUPLINGTRAY- | 制造商:3M Electronic Products Division 功能描述:FDTC-08M-COUPLINGTRAY-4SCUPC F 80611380801 |
| FDTC-08M-E-00N-01C-A-08-EP | 制造商:3M Electronic Products Division 功能描述: |
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