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| 型号： | FDT86256 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 1.2A SOT-223-4 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 845 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 73pF @ 75V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FDT86256DKR |
August 2011
FDT86256
N-Channel PowerTrench ? MOSFET
150 V, 1.2 A, 845 m Ω
Features
Max r DS(on) = 845 m Ω at V GS = 10 V, I D = 1.2 A
Max r DS(on) = 1280 m Ω at V GS = 6.0 V, I D = 1.0 A
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
D
S
D
SOT-223
G
G
D
S
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
150
±20
3
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
2.5
1.2
A
-Pulsed
2
E AS
Single Pulse Avalanche Energy
(Note 3)
1
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
10
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
12
55
°C/W
Package Marking and Ordering Information
Device Marking
86256
Device
FDT86256
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
?2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
1
www.fairchildsemi.com
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