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| 型号： | FDT86256 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 1.2A SOT-223-4 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 845 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 73pF @ 75V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-4 |
| 包装： | 标准包装 |
| 其它名称： | FDT86256DKR |
Typical Characteristics T J = 25 °C unless otherwise noted
3.0
2.5
V GS = 10 V
V GS = 8 V
V GS = 7 V
4
3
V GS = 5.5 V
V GS = 6 V
2.0
1.5
V GS = 6 V
2
V GS = 7 V
V GS = 8 V
1.0
0.5
V GS = 5.5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10 V
0.0
0
1
2
3
4
5
0
0.0
0.5
1.0 1.5 2.0 2.5
3.0
3.5
4.0
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
2.1
I D = 1.2 A
V GS = 10 V
4000
I D = 1.2 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
3000
1.5
2000
1.2
T J = 125 o C
0.9
0.6
1000
T J = 25 o C
0.3
-75
-50
-25 0 25 50 75 100 125 150
0
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On-Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
2.0
1.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = 5 V
10
V GS = 0 V
1
1.0
T J = 150 o C
T J = 25 o C
0.5
T J = 150 o C
T J = 25 o C
0.1
T J = -55 o C
T J = -55 o C
0.0
2
3
4 5 6 7
V GS , GATE TO SOURCE VOLTAGE (V)
8
0.01
0.2
0.4 0.6 0.8 1.0 1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2011 Fairchild Semiconductor Corporation
FDT86256 Rev. C
3
www.fairchildsemi.com
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