参数资料
型号: FDU3706
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 20V 14.7A I-PAK
产品培训模块: High Voltage Switches for Power Processing
标准包装: 75
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 14.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 16.2A,10V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 23nC @ 4.5V
输入电容 (Ciss) @ Vds: 1882pF @ 10V
功率 - 最大: 1.6W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
Typical Characteristics
100
V GS =4.5V
3.0V
1.8
80
3.5V
1.6
60
2.5V
1.4
V GS = 2.5V
40
1.2
3.0V
20
2.0V
1
3.5V
4.0V
4.5V
0
0.8
0
1
2
3
4
5
0
20
40
60
80
100
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
I D = 14.7A
0.03
1.4
1.2
V GS = 4.5V
0.025
0.02
T A = 125 o C
I D = 7.4A
1
0.8
0.6
0.015
0.01
0.005
T A = 25 o C
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( C)
60
o
Figure 3. On-Resistance Variation
withTemperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
V DS = 5V
T A =-55 o C
25 o C
V GS = 0V
25 C
50
40
125 o C
10
1
T A = 125 o C
o
-55 C
30
20
10
0
0.1
0.01
0.001
0.0001
o
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD3706/FDU3706 Rev C (W)
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