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参数资料
| 型号： | FDU8778 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 35A I-PAK |
| 产品变化通告： | Product Discontinuation 03/Dec/2009 |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 75 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 845pF @ 13V |
| 功率 - 最大： | 39W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
May 2006
FDD8778/FDU8778
N-Channel PowerTrench ? MOSFET
25V, 35A, 14m ?
tm
Features
Max r DS(on) = 14.0m ? at V GS = 10V, I D = 35A
Max r DS(on) = 21.0m ? at V GS = 4.5V, I D = 33A
Low gate charge: Q g(TOT) = 12.6nC(Typ), V GS = 10V
Low gate resistance
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(on) and fast switching speed.
RoHS compliant
A
DF
REE I
Application
DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
G D S
I-PAK
(TO-251AA)
D
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
(Note 1)
Ratings
25
±20
35
40
145
Units
V
V
A
E AS
P D
T J , T STG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 2)
24
39
-55 to 175
mJ
W
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in 2 copper pad area
3.8
100
52
° C/W
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD8778
FDU8778
FDU8778
Device
FDD8778
FDU8778
FDU8778_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
?2006 Fairchild Semiconductor Corporation
FDD8778/FDU8778 Rev. A
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU8778-F071 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 25V, 35A, 14mohm |
| FDU8780 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8780_F071 | 功能描述:MOSFET Trans MOS N-Ch 25V 35A 3-Pin RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8780F071 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 25V, 35A, 8.5mOhm |
| FDU8782 | 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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