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参数资料
| 型号： | FDU8778 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 35A I-PAK |
| 产品变化通告： | Product Discontinuation 03/Dec/2009 |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 75 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 845pF @ 13V |
| 功率 - 最大： | 39W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to
25°C
25
17.2
V
mV/° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 20V,
V GS = 0V
V GS = ±20V
T J = 150 ° C
1
250
±10
μ A
μ A
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to
25°C
1.2
1.5
-5.3
2.5
V
mV/°C
V GS = 10V, I D = 35A
11.6
14.0
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 33A
V GS = 10V, I D = 35A
T J = 175°C
15.7
18.2
21.0
23.8
m ?
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 13V, V GS = 0V,
f = 1MHz
f = 1MHz
635
160
108
1.3
845
215
162
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 13V, I D = 35A
V GS = 10V, R GS = 27 ?
6
22
43
32
12
35
69
51
ns
ns
ns
ns
Q g(TOT)
Q g(5)
Q gs
Q gd
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V GS = 0V to 10V
V GS = 0V to 5V
V DD = 13V
I D = 35A
I g = 1.0mA
12.6
6.7
2.1
3.2
18
9.4
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 35A
V GS = 0V, I S = 15A
I F = 35A, di/dt = 100A/ μ s
I F = 35A, di/dt = 100A/ μ s
1.03
0.89
25
17
1.25
1.2
38
26
V
ns
nC
Notes:
1: Pulse time < 30 0 μ s, Duty cycle = 2%.
2: Starting T J = 25 o C, L = 0.1mH, I AS = 22A ,V DD = 23V, V GS = 10V.
FDD8778/FDU8778 Rev. A
2
www.fairchildsemi.com
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