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参数资料
| 型号： | FDU8882 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | IPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 277K |
| 代理商： | FDU8882 |
FDD8882/FDU8882 Rev. 1.0.0
www.fairchildsemi.com
F
9
PSPICE Electrical Model
.SUBCKT FDD8882 2 1 3 ; rev October 2004
Ca 12 8 9e-10
Cb 15 14 9e-10
Cin 6 8 1.55e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 34.1
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 8.6e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.67e-9
RLgate 1 9 86
RLdrain 2 5 10
RLsource 3 7 26.7
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.5e-3
Rgate 9 20 2.43
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 6.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*600),10))}
.MODEL DbodyMOD D (IS=2E-12 IKF=10 N=1.01 RS=5.7e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=4.6e-10 M=0.58 TT=1e-11 XTI=2.7)
.MODEL DbreakMOD D (RS=1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=5.0e-10 IS=1e-30 N=10 M=0.45)
.MODEL MmedMOD NMOS (VTO=2.11 KP=14 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.43)
.MODEL MstroMOD NMOS (VTO=2.65 KP=240 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=1.82 KP=0.09 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=24.3 RS=0.1)
.MODEL RbreakMOD RES (TC1=8.0e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=-6e-3 TC2=6e-6)
.MODEL RSLCMOD RES (TC1=8e-5 TC2=2e-6)
.MODEL RsourceMOD RES (TC1=7.5e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-1.2e-3 TC2=-8.3e-6)
.MODEL RvtempMOD RES (TC1=-2.5e-3 TC2=3.3e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-1.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-2)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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| FDD8882 | N-Channel PowerTrench MOSFET |
| FDD8882_NL | N-Channel PowerTrench MOSFET |
| FDU8882_NL | N-Channel PowerTrench MOSFET |
| FDU8896 | N-Channel PowerTrench MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDU8882_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDU8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDU8896_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDU8896_Q | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDUE0630-H-R24M=P3 | 制造商:TOKO Inc 功能描述: |
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