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参数资料
| 型号： | FDV301N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Digital FET , N-Channel |
| 中文描述： | 220 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 97K |
| 代理商： | FDV301N |
Inverter Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
O (off)
V
I
(off)
V
I
(on)
R
O (on)
Zero Input Voltage Output Current
V
CC
= 20 V, V
I
= 0 V
V
CC
= 5 V, I
O
= 10 μA
V
O
= 0.3 V, I
O
= 0.005 A
V
I
= 2.7 V, I
O
= 0.2 A
1
μA
Input Voltage
0.5
V
1
V
Output to Ground Resistance
4
5
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
25
V
Breakdown Voltage Temp. Coefficient
25
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= 20 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSS
ON CHARACTERISTICS
(Note)
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
100
nA
V
GS(th)
/
T
J
V
GS(th)
R
DS(ON)
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-2.1
mV /
o
C
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 2.7 V, I
D
= 0.2 A
0.65
0.85
1.5
V
Static Drain-Source On-Resistance
3.8
5
T
J
=125°C
6.3
9
V
GS
= 4.5 V, I
D
= 0.4 A
V
GS
= 2.7 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 0.4 A
3.1
4
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
0.2
A
Forward Transconductance
0.2
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
9.5
pF
Output Capacitance
6
pF
Reverse Transfer Capacitance
1.3
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 6 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
3.2
8
ns
Turn - On Rise Time
6
15
ns
Turn - Off Delay Time
3.5
8
ns
Turn - Off Fall Time
3.5
8
ns
Total Gate Charge
V
DS
= 5 V, I
D
= 0.2 A,
V
GS
= 4.5 V
0.49
0.7
nC
Gate-Source Charge
0.22
nC
Gate-Drain Charge
0.07
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
0.29
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.29 A
(Note)
0.8
1.2
V
Note:
Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDV301N Rev.F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV301N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N DIGITAL SOT-23 |
| FDV301N | 制造商:Fairchild Semiconductor Corporation 功能描述:25V N-CH. FET 4 O SOT23 |
| FDV301N_D87Z | 功能描述:MOSFET 25V N-Ch FET 4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV301N_NB9V005 | 功能描述:MOSFET N-Ch Digital Automotive Spec RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV301N_NB9V008 | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:25 V, 0.22 A N-Chan Digital FET |
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