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| 型号： | FDY300NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 600MA SC89 |
| 产品变化通告： | Mold Compound Change 20/Aug/2008 |
| 产品目录绘图： | SOT-523F, SC89-3 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60pF @ 10V |
| 功率 - 最大： | 446mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-89，SOT-490 |
| 供应商设备封装： | SC-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDY300NZDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown
V GS = 0 V,
I D = 250 μ A
20
V
Voltage
? BV DSS
Breakdown Voltage Temperature
I D = 250 μ A, Referenced to 25 ° C
15
mV/ ° C
? T J
Coefficient
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage,
V DS = 16 V,
V GS = ± 12 V,
V GS = 0 V
V DS = 0 V
1
± 10
μ A
μ A
On Characteristics
(Note 2)
V GS = ± 4.5 V, V DS = 0 V
± 1
μ A
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
0.6
1.0
1. 3
V
? V GS(th)
Gate Threshold Voltage
I D = 250 μ A, Referenced to 25 ° C
3
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain–Source
On–Resistance
V GS = 4.5 V,
V GS = 2.5 V,
I D = 600 mA
I D = 500 mA
0.24
0.36
0.70
0.85
?
V GS = 1.8 V,
I D = 150 mA
0.70
1.25
V GS = 4.5 V, I D =600mA, T J = 125 ° C
0.35
1.00
g FS
Forward Transconductance
V DS = 5 V,
I D = 600 mA
1.8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V,
f = 1.0 MHz
V GS = 0 V,
60
20
10
pF
pF
pF
Switchin g Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 10 V,
V GS = 4.5 V,
V DS = 10 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6 ?
I D = 600 mA,
6
8
8
2.4
0.8
0.16
12
16
16
4.8
1.1
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 150 mA
(Note 2)
0.7
1.2
V
Voltage
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 600 mA,
dI F /dt = 100 A/μs
8
1
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
FDY300NZ Rev B
a)
200°C/W when
mounted on a 1in 2 pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2 . Pulse Test: Pulse Width < 300 μ s,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDY300NZ_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench MOSFET |
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| FDY302NZ | 功能描述:MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDY4001CZ | 功能描述:MOSFET SC89-6 COMP NCH & PCH POWER T RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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