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参数资料
| 型号： | FDZ299P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | LED, RT ANGLE, BLUE, SM |
| 中文描述： | 4.6 A, 20 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ULTRA THIN, BGA-9 |
| 文件页数： | 1/6页 |
| 文件大小： | 178K |
| 代理商： | FDZ299P |
February 2004
2004 Fairchild Semiconductor Corporation
FDZ299P Rev C6 (W)
FDZ299P
P-Channel 2.5 V Specified PowerTrench
BGA MOSFET
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ299P minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
Applications
Battery management
Load switch
Battery protection
Features
–4.6 A, –20 V R
DS(ON)
= 55 m
@ V
GS
= –4.5 V
R
DS(ON)
= 80 m
@ V
GS
= –2.5 V
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability.
Bottom
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
12
–4.6
–10
1.7
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
°
C/W
Package Marking and Ordering Information
Device Marking
Device
B
FDZ299P
Reel Size
7”
Tape width
8mm
Quantity
3000 units
F
B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDZ299P_Q | 功能描述:MOSFET 20V/12V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ371PZ | 功能描述:MOSFET P-Ch 1.5V Specified PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ372NZ | 功能描述:MOSFET 20V N-Channel 1.5V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDZ375 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ375P | 功能描述:MOSFET 20V P-Channel 1.5V Specfied PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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