参数资料
型号: FFP15S60STU
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 446K
描述: DIODE STEALTHII 600V 15A TO220-2
产品目录绘图: Power Diode Circuit
标准包装: 50
系列: Stealth™
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 15A
电压 - 在 If 时为正向 (Vf)(最大): 2.6V @ 15A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 100µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220-2L
包装: 管件
FFP15S60S
STEALTH? II Diode
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 4.
Typical Reverse
Current
Figure 3. Typical Forward Voltage Drop
vs.
F
orward
C
urrent
vs.
R
everse
V
oltage
Figure
6.
Typical Reverse Recovery
Time
vs.
diF/dt
Figure 7. Typical
Reverse Recovery
Current vs.
diF/dt
0.1
01234
1
10
TC
= 75
oC
TC
= 125
oC
Forward Current, I
F
[A]
TC
= 25
oC
70
100 200 300 400 500 600
0.01
10
0.1
1
10
100
TC
= 125
oC
TC
= 25
oC
TC
=75
oC
Reverse Current, I
R
[
μ
A
]
Reverse Voltage, VR
[V]
30
0.1
1
10
100
60
90
120
150
180
Typical Capacitance
at 0V = 180 pF
Capacitances, Cj [pF]
Reverse Voltage, VR[V]
20
100 200 300 400 500 600
30
40
50
60
IF
= 15A
TC
= 25
oC
TC
= 75
oC
TC
= 125
oC
Reverse Recovery
Time,
T
rr
[ns]
025 50 75 100 125 150
10
20
30
40
50
Average Forward Current, I
F(AV)
[A]
Case temperature, TC
[oC]
DC
1
100 200 300 400 500 600
2
3
4
5
6
7
TC
= 125
oC
TC
= 25
oC
TC
= 75
oC
Reverse Recovery Current, I
rr
[A]
diF/dt
[A/μs]
I
F
= 15A
?2007 Fairchild Semiconductor Corporation
FFP15S60S Rev. C1
Forward
V
oltage,
V
F
[V
]
Figure 5. Typical
Junction Capacitance
diF/dt
[A/μs]
Fig
ure 8.
For
ward Current Derating Curve
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