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参数资料
| 型号： | FG50N06L |
| 厂商： | Intersil Corporation |
| 英文描述： | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 50A条，60V的，0.022欧姆，逻辑电平N沟道功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 412K |
| 代理商： | FG50N06L |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
50A, 60V, 0.022 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49164.
Features
50A, 60V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06LE
TO-247
FG50N06L
RFP50N06LE
TO-220AB
FP50N06L
RF1S50N06LESM
TO-263AB
F50N06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4072.3
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