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参数资料
| 型号： | FGA25N120AND |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 867K |
| 代理商： | FGA25N120AND |
2005 Fairchild Semiconductor Corporation
FGA25N120ANTD Rev. B
1
www.fairchildsemi.com
F
August 2005
FGA25N120ANTD
1200V NPT Trench IGBT
Features
NPT Trench Technology, Positive temperature coefficient
Low saturation voltage: V
CE(sat), typ
= 2.0V
@ I
C
= 25A and T
C
= 25
°
C
Low switching loss: E
off, typ
= 0.96mJ
@ I
C
= 25A and T
C
= 25
C
Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching
application such as induction heating, microwave oven, etc.
Absolute Maximum Ratings
Thermal Characteristics
G
C
E
G C E
TO-3P
Symbol
Description
FGA25N120ANTD
Units
V
CES
V
GES
I
C
Collector-Emitter Voltage
1200
V
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
50
A
Collector Current
25
A
I
CM
I
F
I
FM
P
D
Pulsed Collector Current
(Note 1)
75
A
Diode Continuous Forward Current
@ T
C
= 100
°
C
25
A
Diode Maximum Forward Current
150
A
Maximum Power Dissipation
@ T
C
= 25
°
C
@ T
C
= 100
°
C
312
W
Maximum Power Dissipation
125
W
T
J
T
stg
T
L
Operating Junction Temperature
-55 to +150
°
C
°
C
°
C
Storage Temperature Range
-55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case for IGBT
--
0.4
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case for Diode
--
2.0
Thermal Resistance, Junction-to-Ambient
--
40
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGA25N120ANDTU | 功能描述:IGBT 晶体管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGA25N120ANTD | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-3P TUBE 30 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT 1200V 50A TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, C 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,NPT,TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, Collector Emitter Voltage Vces:2.5V, Power Dissipation Pd:312W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Range:-55C to +150C, Transistor Case , RoHS Compliant: Yes |
| FGA25N120ANTD_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTD_F109 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTDTU | 功能描述:IGBT 晶体管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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