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参数资料
| 型号： | FGA25N120AND |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 867K |
| 代理商： | FGA25N120AND |
2
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA25N120ANTD
FGA25N120ANTD
TO-3P
--
--
30
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
I
CES
I
GES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
3
mA
G-E Leakage Current
--
--
± 250
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
I
C
= 25mA, V
CE
= V
GE
I
C
= 25A
,
V
GE
= 15V
I
C
= 25A
,
V
GE
= 15V,
T
C
= 125
°
C
I
C
= 50A
,
V
GE
= 15V
3.5
5.5
7.5
V
Collector to Emitter
Saturation Voltage
--
2.0
2.5
V
--
2.15
--
V
--
2.65
--
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
3700
--
pF
Output Capacitance
--
130
--
pF
Reverse Transfer Capacitance
--
80
--
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
V
CC
= 600 V, I
C
= 25A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
50
--
ns
Rise Time
--
60
90
ns
Turn-Off Delay Time
--
190
--
ns
Fall Time
--
100
180
ns
Turn-On Switching Loss
--
4.1
6.2
mJ
Turn-Off Switching Loss
--
0.96
1.5
mJ
Total Switching Loss
--
5.06
7.7
mJ
Turn-On Delay Time
V
CC
= 600 V, I
C
= 25A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
--
50
--
ns
Rise Time
--
60
--
ns
Turn-Off Delay Time
--
200
--
ns
Fall Time
--
154
--
ns
Turn-On Switching Loss
--
4.3
6.9
mJ
Turn-Off Switching Loss
--
1.5
2.4
mJ
Total Switching Loss
--
5.8
9.3
mJ
Total Gate Charge
V
CE
= 600 V, I
C
= 25A,
V
GE
= 15V
--
200
300
nC
Gate-Emitter Charge
--
15
23
nC
Gate-Collector Charge
--
100
150
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FGA25N120ANDTU | 功能描述:IGBT 晶体管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGA25N120ANTD | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-3P TUBE 30 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT 1200V 50A TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, C 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,NPT,TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, Collector Emitter Voltage Vces:2.5V, Power Dissipation Pd:312W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Range:-55C to +150C, Transistor Case , RoHS Compliant: Yes |
| FGA25N120ANTD_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTD_F109 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTDTU | 功能描述:IGBT 晶体管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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