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参数资料
| 型号： | FGA25N12ANTD |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 1200V NPT Trench IGBT |
| 中文描述： | 1200伏不扩散核武器条约沟道IGBT |
| 文件页数： | 1/9页 |
| 文件大小： | 861K |
| 代理商： | FGA25N12ANTD |
2005 Fairchild Semiconductor Corporation
FGA25N120ANTD Rev. A
1
www.fairchildsemi.com
F
May 2005
FGA25N120ANTD
1200V NPT Trench IGBT
Features
NPT Trench Technology, Positive temperature coefficient
Low saturation voltage: V
CE(sat), typ
= 2.0V
@ I
C
= 25A and T
C
= 25
°
C
Low switching loss: E
off, typ
= 0.96mJ
@ I
C
= 25A and T
C
= 25
C
Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching
application such as induction heating, microwave oven, etc.
Absolute Maximum Ratings
Thermal Characteristics
G
C
E
G C E
TO-3P
Symbol
Description
FGA25N120ANTD
Units
V
CES
V
GES
I
C
Collector-Emitter Voltage
1200
V
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
50
A
Collector Current
25
A
I
CM
I
F
I
FM
P
D
Pulsed Collector Current
(Note 1)
75
A
Diode Continuous Forward Current
@ T
C
= 100
°
C
25
A
Diode Maximum Forward Current
150
A
Maximum Power Dissipation
@ T
C
= 25
°
C
@ T
C
= 100
°
C
312
W
Maximum Power Dissipation
125
W
T
J
T
stg
T
L
Operating Junction Temperature
-55 to +150
°
C
°
C
°
C
Storage Temperature Range
-55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case for IGBT
--
0.4
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case for Diode
--
2.0
Thermal Resistance, Junction-to-Ambient
--
40
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