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参数资料
| 型号： | FGA25N12ANTD |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 1200V NPT Trench IGBT |
| 中文描述： | 1200伏不扩散核武器条约沟道IGBT |
| 文件页数： | 5/9页 |
| 文件大小： | 861K |
| 代理商： | FGA25N12ANTD |
5
www.fairchildsemi.com
FGA25N120ANTD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
td(on)
tr
S
Gate Resistance, R
G
[
]
1
10
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
Crss
C
Collector-Emitter Voltage, V
CE
[V]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
Eon
Eoff
S
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
S
Gate Resistance, R
G
[
]
10
20
30
40
50
100
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
°
C
T
C
= 125
°
C
tr
td(on)
S
Collector Current, I
C
[A]
10
20
30
40
50
100
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
S
Collector Current, I
C
[A]
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