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参数资料
| 型号： | FGA25N12ANTD |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 1200V NPT Trench IGBT |
| 中文描述： | 1200伏不扩散核武器条约沟道IGBT |
| 文件页数： | 2/9页 |
| 文件大小： | 861K |
| 代理商： | FGA25N12ANTD |
2
www.fairchildsemi.com
FGA25N120ANTD Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA25N120ANTD
FGA25N120ANTD
TO-3P
-
-
30
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
I
CES
I
GES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
3
mA
G-E Leakage Current
--
--
± 250
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
I
C
= 25mA, V
CE
= V
GE
I
C
= 25A
,
V
GE
= 15V
I
C
= 25A
,
V
GE
= 15V,
T
C
= 125
°
C
I
C
= 50A
,
V
GE
= 15V
3.5
5.5
7.5
V
Collector to Emitter
Saturation Voltage
--
2.0
2.5
V
--
2.15
--
V
--
2.65
--
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
3700
--
pF
Output Capacitance
--
130
--
pF
Reverse Transfer Capacitance
--
80
--
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
V
CC
= 600 V, I
C
= 25A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
50
--
ns
Rise Time
--
60
--
ns
Turn-Off Delay Time
--
190
--
ns
Fall Time
--
100
--
ns
Turn-On Switching Loss
--
4.1
--
mJ
Turn-Off Switching Loss
--
0.96
--
mJ
Total Switching Loss
--
5.06
--
mJ
Turn-On Delay Time
V
CC
= 600 V, I
C
= 25A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
--
50
--
ns
Rise Time
--
60
--
ns
Turn-Off Delay Time
--
200
--
ns
Fall Time
--
154
--
ns
Turn-On Switching Loss
--
4.3
--
mJ
Turn-Off Switching Loss
--
1.5
--
mJ
Total Switching Loss
--
5.8
--
mJ
Total Gate Charge
V
CE
= 600 V, I
C
= 25A,
V
GE
= 15V
--
200
--
nC
Gate-Emitter Charge
--
15
--
nC
Gate-Collector Charge
--
100
--
nC
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