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参数资料
| 型号： | FGA50N60LS |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 493K |
| 代理商： | FGA50N60LS |
2003 Fairchild Semiconductor Corporation
FGA50N60LS Rev. A
IGBT
F
FGA50N60LS
General Description
Fairchild's LS series product of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The LS series is
especially designed for applications in medium frequencies
such as switched reluctance motor controls, AC & DC
motor controls, general inverters etc.
Features
Short circuit rated 10
μ
s @ T
C
= 100
°
C, V
GE
= 15V
Low saturation voltage : V
CE(sat)
= 1.6 V @ I
C
= 50A
High input impedance
Optimized for medium operating frequencies (1~5kHz)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
V
CES
V
GES
Description
FGA50N60LS
600
±
20
100
50
150
10
240
96
-55 to +150
-55 to +150
Units
V
V
A
A
A
μ
s
W
W
°
C
°
C
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
I
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
I
CM (1)
T
SC
P
D
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
T
J
T
stg
T
L
300
°
C
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
--
--
Max.
0.52
40
Units
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Applications
Switched Reluctance Motor Controls , AC & DC motor controls, general purpose inverters,Robotics, and Servo controls
G
C
E
G C E
TO-3P
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| FGA60N65SMD | 功能描述:IGBT 晶体管 650V, 60A Field Stop IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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