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参数资料
| 型号： | FGD3N60LSDTM |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封装： | DPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSDTM |
2005 Fairchild Semiconductor Corporation
FGD3N60LSD Rev. A
1
www.fairchildsemi.com
F
July 2005
FGD3N60LSD
IGBT
Features
High Current Capability
Very Low Saturation Voltage : V
CE(sat)
= 1.2 V @ I
C
= 3A
High Input Impedance
Applications
HID Lamp Applications
Piezo Fuel Injection Applications
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
D-PAK
G
E
C
G
C
E
Symbol
Description
FGD3N60LSD
Units
V
CES
V
GES
I
C
Collector-Emitter Voltage
600
V
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
6
A
Collector Current
3
A
I
CM (1)
I
F
Pulsed Collector Current
25
A
Diode Continous Forward Current @ T
C
= 100
°
C
Diode Maximum Forward Current
3
A
I
FM
25
A
P
D
Maximum Power Dissipation
@ T
C
= 25
°
C
40
W
Derating Factor
0.32
W/
°
C
°
C
°
C
°
C
T
J
T
stg
T
L
Operating Junction Temperature
-55 to +150
Storage Temperature Range
-55 to +150
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
250
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
(IGBT)
R
θ
JA
Thermal Resistance, Junction-to-Case
--
3.1
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
--
100
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