型号: | FGD3N60LSDTM |
厂商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分类: | IGBT 晶体管 |
英文描述: | IGBT |
中文描述: | 6 A, 600 V, N-CHANNEL IGBT |
封装: | DPAK-3 |
文件页数: | 5/8页 |
文件大小: | 848K |
代理商: | FGD3N60LSDTM |
相关PDF资料 |
PDF描述 |
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FGH20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
FGB20N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes |
FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
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FGD3N60UNDF | 功能描述:IGBT 晶体管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
FGD4536 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:360V, PDP IGBT |
FGD4536TM | 功能描述:IGBT 晶体管 360V PDP IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
FGD4536TM_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK |
FGD6AFCFC-001M | 制造商:DigitHead Inc 功能描述:1M MULTIMODE 62.5/125, 3.0MM SIMPLEX RISER JACKET, FC/PC TO FC/PC |