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参数资料
| 型号： | FGD4536TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT PDP 360V 50A DPAK |
| 标准包装： | 2,500 |
| IGBT 类型： | 沟道 |
| 电压 - 集电极发射极击穿（最大）： | 360V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，50A |
| 功率 - 最大： | 125W |
| 输入类型： | 标准 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
September 2013
FGD4536
360 V PDP Trench IGBT
Features
General Description
?
?
?
?
?
High Current Capability
Low Saturation Voltage: V CE(sat) = 1.59 V @ I C = 50 A
High Input Impedance
Fast Switching
RoHS Compliant
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances and PDP TV applications where low conduction and
switching losses are essential.
Applications
? PDP TV, Consumer Appliances
C
G
E
TO-252/D-PAK
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
360
? 30
Unit
V
V
I C pulse(1)*
Pulsed Collector Current
@ T C =
25 o C
220
A
P D
T J
T stg
T L
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T C = 25 o C
@ T C = 100 o C
125
50
-55 to +150
-55 to +150
300
W
W
o C
o C
o C
Thermal Characteristics
Symbol
R ? JC (IGBT)
R ? JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
Max.
1.0
62.5
Unit
o C / W
o C / W
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1 ? sec
* Ic_pluse limited by max Tj
?2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C 1
1
www.fairchildsemi.com
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| FGD4536TM_F065 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 360V 125W DPAK |
| FGD6AFCFC-001M | 制造商:DigitHead Inc 功能描述:1M MULTIMODE 62.5/125, 3.0MM SIMPLEX RISER JACKET, FC/PC TO FC/PC |
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