参数资料
型号: FGH30N60LSDTU
厂商: Fairchild Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: IGBT SWITCHING 600V 60A TO-247
产品变化通告: Lead Frame Change 20/Dec/2007
产品目录绘图: IGBT TO-247 Package
标准包装: 150
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 1.4V @ 15V,30A
电流 - 集电极 (Ic)(最大): 60A
功率 - 最大: 480W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
November 2013
FGH30N60LSD
600 V, 30 A PT IGBT
Features
? Low Saturation Voltage: V CE(sat) = 1.1 V @ I C = 30 A
? High Input Impedance
? Low Conduction Loss
Applications
General Description
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
? Solar Inverter, UPS
C
G
G
C
E
TO-247
E
Absolute Maximum Ratings
Symbol
V CES
V GES
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Ratings
600
? 20
Unit
V
V
I C
I CM (1)
I FSM
P D
T J
T stg
T L
Collector Current
Collector Current
Pulsed Collector Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T C = 25 ? C
@ T C = 100 ? C
@ T C = 25 ? C
@ T C = 100 ? C
60
30
90
150
480
192
-55 to +150
-55 to +150
300
A
A
A
A
W
W
? C
? C
? C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R ? JC (IGBT)
R ? JC (Diode)
R ? JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.26
0.92
40
Unit
? C / W
? C / W
? C / W
?2007 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. C1
1
www.fairchildsemi.com
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