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参数资料
| 型号： | FGH40N60SMDF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IGBT 600V 40A TO-247 |
| 标准包装： | 150 |
| IGBT 类型： | 场截止 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，40A |
| 电流 - 集电极 (Ic)（最大）： | 80A |
| 功率 - 最大： | 349W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
November 2013
FGH40N60SMDF
600 V, 40 A Field Stop IGBT
Features
? Maximum Junction Temperature : T J = 175°C
? Positive Temperaure Co-efficient for Easy Parallel Operating
? High Current Capability
? Low Saturation Voltage: V CE(sat) = 1.9 V(Typ.) @ I C = 40 A
? High Input Impedance
? Fast Switching: E OFF = 6.5 uJ/A
? Tightened Parameter Distribution
? RoHS Compliant
Applications
? Solar Inverter, UPS, Welder, PFC, Telecom, ESS
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of field stop 2 nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are
essential.
E
C
C
G
G
COLLECTOR
Absolute Maximum Ratings
(FLANGE)
E
Symbol
V CES
V GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
600
? 20
Unit
V
V
@ T C = 25 C
@ T C = 100 C
I C
I CM (1)
P D
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T C = 25 o C
@ T C = 100 o C
o
@ T C = 25 o C
o
80
40
120
349
174
A
A
A
W
W
T J
T stg
T L
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
-55 to +175
-55 to +175
300
o
o
o
C
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
R ? JC (IGBT)
R ? JC (Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
-
-
0.43
1.45
o
o
C / W
C / W
R ? JA
Thermal Resistance, Junction to Ambient
-
40
o C / W
?2010 Fairchild Semiconductor Corporation
FGH40N60SMDF Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FGH40N60SMD | IGBT 600V 80A 349W TO-247-3 |
| FGH40N60UFDTU | IGBT FIELD STOP 600V 80A TO-247 |
| FGH40N60UFTU | IGBT FIELD STOP 600V 80A TO-247 |
| FGH40N65UFDTU | IGBT 80A 650V TO-247 |
| FGH40T100SMD | IGBT N-CH 1000V 80A TO-247-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH40N60UF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 40A Field Stop IGBT |
| FGH40N60UFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V, 40A Field Stop IGBT |
| FGH40N60UFDTU | 功能描述:IGBT 晶体管 600V 40A Field Stop RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH40N60UFTU | 功能描述:IGBT 晶体管 600V 40A Field Stop RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH40N65UFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:650V, 40A Field Stop IGBT |
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