参数资料
型号: FGH40N60SMDF
厂商: Fairchild Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: IGBT 600V 40A TO-247
标准包装: 150
IGBT 类型: 场截止
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.5V @ 15V,40A
电流 - 集电极 (Ic)(最大): 80A
功率 - 最大: 349W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247-3
包装: 管件
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
T C = 25 C
T C = 150 C
120
o
20V
15V
12V
10V
120
o
20V
15V
12V
10V
90
60
90
60
V GE = 8V
30
V GE = 8V
30
0
0
2 4
6
0
0
2 4
6
Collector-Emitter Voltage, V CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Collector-Emitter Voltage, V CE [V]
Figure 4. Transfer Characteristics
120
T C = 25 C
T C = 150 C
T C = 25 C
90
60
30
Common Emitter
V GE = 15V
o
o
Common Emitter
V CE = 20V
o
90 T C = 150 o C
60
30
0
0
1 2 3
4
0
0
2
4 6 8 10
12
Collector-Emitter Voltage, V CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Gate-Emitter Voltage,V GE [V]
Figure 6. Saturation Voltage vs. V GE
T C = -40 C
2.5
Common Emitter
V GE = 15V
80A
20
16
Common Emitter
o
12
2.0
40A
8
1.5
I C = 20A
4
40A
I C = 20A
80A
Case Temperature, T C [ C]
1.0
25
50 75 100 125
o
150
0
4
8 12 16
Gate-Emitter Voltage, V GE [V]
20
?2010 Fairchild Semiconductor Corporation
FGH40N60SMDF Rev. C1
4
www.fairchildsemi.com
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FGH40N60SMD IGBT 600V 80A 349W TO-247-3
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