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参数资料
| 型号： | FGH30N6S2D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 11/12页 |
| 文件大小： | 281K |
| 代理商： | FGH30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TO263AB
24mm TAPE AND REEL
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
E
A
1
A
H
1
D
L
b
e
e1
L
2
b
1
L
1
c
TERM. 4
1
3
1
3
L
3
b
2
TERM. 4
0.450
(11.43)
0.350
(8.89)
0.150
(3.81)
0.080 TYP (2.03)
0.062 TYP (1.58)
0.700
(17.78)
J
1
SYMBOL
A
A
1
b
b
1
b
2
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev.
C of JEDEC TO-263AB outline dated 2-92.
2. L
and b
dimensions established a minimum mounting
surface for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from
bottom of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
INCHES
MIN
0.170
0.048
0.030
0.045
0.310
0.018
0.405
0.395
0.100 TYP
0.200 BSC
0.045
0.095
0.175
0.090
0.050
0.315
MILLIMETERS
MIN
4.32
1.22
0.77
1.15
7.88
0.46
10.29
10.04
2.54 TYP
5.08 BSC
1.15
2.42
4.45
2.29
1.27
8.01
NOTES
-
4, 5
4, 5
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.180
0.052
0.034
0.055
-
0.022
0.425
0.405
MAX
4.57
1.32
0.86
1.39
-
0.55
10.79
10.28
0.055
0.105
0.195
0.110
0.070
-
1.39
2.66
4.95
2.79
1.77
-
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
USER DIRECTION OF FEED
16mm
24mm
COVER TAPE
330mm
100mm
13mm
30.4mm
24.4mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
40mm MIN.
相关PDF资料 |
PDF描述 |
|---|---|
| FGP30N6S2D | Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes |
| FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGP30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGB30N6S2 | 600V, SMPS II Series N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH30N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH30S130P | 功能描述:IGBT 晶体管 1300V 30A FS SA Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH30T65UPDT_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 30A TRENCH TO-247-3 |
| FGH40N120AN | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGH40N120ANTU | 功能描述:IGBT 晶体管 1200V NPT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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