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参数资料
| 型号： | FGH30N6S2D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 7/12页 |
| 文件大小： | 281K |
| 代理商： | FGH30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
q
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
qJC
X R
qJC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 26. Inductive Switching Test Circuit
Figure 27. Switching Test Waveforms
R
G
= 10
L = 500
μ
H
V
DD
= 390V
+
-
FGH30N6S2D
DIODE TA49390
FGH30N6S2D
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
相关PDF资料 |
PDF描述 |
|---|---|
| FGP30N6S2D | Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes |
| FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGP30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGB30N6S2 | 600V, SMPS II Series N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH30N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH30S130P | 功能描述:IGBT 晶体管 1300V 30A FS SA Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH30T65UPDT_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 30A TRENCH TO-247-3 |
| FGH40N120AN | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGH40N120ANTU | 功能描述:IGBT 晶体管 1200V NPT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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