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参数资料
| 型号： | FGH30N6S2D |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 9/12页 |
| 文件大小： | 281K |
| 代理商： | FGH30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
b
b
1
b
2
c
D
E
L
L
1
R
1
2
e
1
3
1
J
1
S
Q
P
BACK VIEW
TERM. 4
3
e
2
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b
1
0.060
0.070
1.53
1.77
1, 2
b
2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
-
e
0.219 TYP
5.56 TYP
4
e
1
0.438 BSC
11.12 BSC
4
J
1
0.090
0.105
2.29
2.66
5
L
0.620
0.640
15.75
16.25
-
L
1
0.145
0.155
3.69
3.93
1
P
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
R
0.195
0.205
4.96
5.20
-
S
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of di-
mension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of di-
mension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
相关PDF资料 |
PDF描述 |
|---|---|
| FGP30N6S2D | Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes |
| FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGP30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGB30N6S2 | 600V, SMPS II Series N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FGH30N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH30S130P | 功能描述:IGBT 晶体管 1300V 30A FS SA Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FGH30T65UPDT_F155 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 30A TRENCH TO-247-3 |
| FGH40N120AN | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:1200V NPT IGBT |
| FGH40N120ANTU | 功能描述:IGBT 晶体管 1200V NPT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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