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参数资料
| 型号： | FLM1213-8F |
| 厂商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段内部匹配场效应管 |
| 文件页数： | 2/4页 |
| 文件大小： | 296K |
| 代理商： | FLM1213-8F |
2
FLM1213-8F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°C)
40
50
30
20
10
Total
Power
Dissipation
(W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 13.2 GHz
f2 = 13.21 GHz
2-tone test
19
23
21
25
27
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Output
Power
(S.C.L.)
(dBc)
-20
-30
-40
-50
25
27
29
31
33
35
IM
3
(dBc)
IM3
Pout
12.7
12.8 12.9
13.0
13.1
13.2
36
37
35
39
38
40
Frequency (GHz)
Output
Power
(dBm)
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
Pin = 34.5dBm
32.5dBm
30.5dBm
28.5dBm
23
25
27
29
31
33
35
30
32
34
36
38
40
30
15
45
Input Power (dBm)
Output
Power
(dBm)
η
add
(%)
ηadd
Pout
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 12.95 GHz
相关PDF资料 |
PDF描述 |
|---|---|
| FLM1314-18F | X,Ku-Band Internally Matched FET |
| FLM1314-8F | X, Ku-Band Internally Matched FET |
| FLM1414-4F | Internally Matched Power GaAs FET |
| FLM1414-8F | Internally Matched Power GaAs FET |
| FLM1415-6F | Internally Matched Power GaAs FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FLM1314-12F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 5000mA, Bulk |
| FLM1314-3F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 5.5dB, 13.75 14.5GHz, 1650mA, Bulk |
| FLM1314-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 2400mA, Bulk |
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