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参数资料
| 型号： | FLM1314-18F |
| 厂商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X,Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段内部匹配场效应管 |
| 文件页数： | 1/5页 |
| 文件大小： | 118K |
| 代理商： | FLM1314-18F |
X,Ku-Band Internally Matched FET
FEATURES
E
High Output Power: P1dB=42.5dBm(Typ.)
E
High Gain: G1dB=6.0dB(Typ.)
E
High PAE:
ηadd=27%(Typ.)
E
Broad Band: 13.75~14.5GHz
E
Impedance Matched Zin/Zout = 50
Ε
Hermetically Sealed Package
Edition 1.1
May 2005
1
FLM1314-18F
DESCRIPTION
The FLM1314-18F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 oC)
Item
Symbol
Unit
Drain-Source Voltage
VDS
V
Gate-Source Voltage
VGS
V
Total Power Dissipation
PT
W
Storage Temperature
Tstg
oC
Channel Temperature
Tch
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25o C)
Item
Symbol
Unit
DC Input Voltage
VDS
V
Forward Gate Current
IGF
mA
Reverse Gate Current
IGR
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C)
Min.
Typ.
Max.
Drain Current
IDSS
-
9.3
14
A
Trans conductance
gm
-
6600
-
mS
Pinch-off Voltage
Vp
-0.5
-1.5
-3.0
V
Gate-Source Breakdown Voltage
VGSO
-5.0
-
V
Output Power at 1dB G.C.P.
P1dB
42.0
42.5
-
dBm
Power Gain at 1dB G.C.P.
G1dB
5.0
6.0
-
dB
Drain Current
Idsr
-
5.0
6.0
A
Power-added Efficiency
Nadd
-
27
-
%
Gain Flatness
G
-
1.2
dB
3rd Order Intermodulation
Distortion
IM3
-25
-30
-
dBc
Thermal Resistance
Rth
Channel to Case
-
1.8
2.0
oC/W
Channel Temperature Rise
Tch
-
100
oC
CASE STYLE : IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
ESD
Class III
2000V @
~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k
)
IGS=-390uA
V DS=10V
IDSDC=4.0A
f= 13.75
~ 14.5 GHz
Zs=ZL=50 ohm
10V x Idsr X Rth
Unit
V DS=5V , V GS=0V
V DS=5V , IDS=4.65A
V DS=5V , IDS=390mA
f=14.5 GHz
f=10MHzC
2-tone Test
Pout=36.0dBm (S.C.L.)
RG=25 ohm
-9.6
Item
Symbol
Condition
Limit
…
10
RG=25 ohm
…
44.6
75
Rating
15
-5
Condition
Limit
-65 to +150
175
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FLM1314-3F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 5.5dB, 13.75 14.5GHz, 1650mA, Bulk |
| FLM1314-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 2400mA, Bulk |
| FLM14/10 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM1414-12F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
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