参数资料
型号: FLM1414-4F
厂商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: Internally Matched Power GaAs FET
中文描述: 内部匹配砷化镓场效应管
文件页数: 2/4页
文件大小: 302K
代理商: FLM1414-4F
2
FLM1414-4F
Internally Matched Power GaAs FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°C)
24
30
18
12
6
Total
Power
Dissipation
(W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 14.5 GHz
f2 = 14.51 GHz
2-tone test
18
16
22
20
24
-35
-25
-45
-55
27
25
23
29
31
21
Pout
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Output
Power
(S.C.L.)
(dBc)
IM3
IM
3
(dBc)
VDS=10V
f = 14.25 GHz
18
22
20
26
28
30
32
24
15
20
25
30
10
5
0
30
28
26
32
34
36
38
24
Pout
ηadd
Input Power (dBm)
Output
Power
(dBm)
η
add
(%)
OUTPUT POWER vs. INPUT POWER
14.1
14.0
14.2
14.3
14.4
14.5
32
31
30
33
34
35
36
37
Frequency (GHz)
Output
Power
(dBm)
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
Pin = 30dBm
28dBm
26dBm
24dBm
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