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参数资料
| 型号： | FLM1414-4F |
| 厂商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | Internally Matched Power GaAs FET |
| 中文描述： | 内部匹配砷化镓场效应管 |
| 文件页数： | 3/4页 |
| 文件大小： | 302K |
| 代理商： | FLM1414-4F |
3
FLM1414-4F
Internally Matched Power GaAs FET
S-PARAMETERS
VDS = 10V, IDS = 1100mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
13800
.479
-159.9
1.883
-51.6
.080
-54.0
.459
156.7
13900
.436
-178.2
1.921
-70.6
.084
-73.1
.454
134.3
14000
.388
162.3
1.955
-90.8
.093
-94.2
.438
112.7
14100
.334
141.1
1.990
-110.4
.098
-115.0
.430
92.1
14200
.278
117.4
2.017
-131.2
.100
-135.6
.413
68.9
14300
.209
88.3
2.032
-151.9
.110
-157.1
.381
48.0
14400
.162
47.6
2.050
-172.9
.113
-177.9
.353
24.8
14500
.150
-8.2
2.016
165.3
.114
160.0
.307
0.4
14600
.194
-55.1
1.966
143.4
.116
138.4
.256
-24.4
14700
.264
-89.3
1.882
121.0
.115
117.5
.216
-55.4
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
0
°
-90
°
S21
S12
SCALE FOR |S21|
SCALE
FOR
|S
12
|
250
13.8 GHz
14.7
14.5
14.2
14.0
14.7
14.5
14.4
14.2
14.0
10
25
1
2
3
4
0.2
0.1
13.8 GHz
14.7
14.5
14.4
14.2
14.0
13.8 GHz
相关PDF资料 |
PDF描述 |
|---|---|
| FLM1414-8F | Internally Matched Power GaAs FET |
| FLM1415-6F | Internally Matched Power GaAs FET |
| FLM3135-12F | C-Band Internally Matched FET |
| FLSH-2000-D001 | 200/230 um, MULTI MODE, SIMPLEX FIBER OPTIC CONNECTOR |
| FLX-SRF2 | BOARD TERMINATED, FEMALE, RF CONNECTOR, SURFACE MOUNT, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FLM1414-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 1650mA, Bulk |
| FLM1414-8C | 制造商:FUJITSU 功能描述:MESFET Transistor, N-CHAN, SOT-469AVAR |
| FLM1414-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 2200mA, Bulk |
| FLM1415-3F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
| FLM1415-6F | 制造商:EUDYNA 制造商全称:Eudyna Devices Inc 功能描述:Internally Matched Power GaAs FET |
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