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参数资料
| 型号： | FQA11N90C_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 900V 11A TO-3P |
| 产品变化通告： | Design/Process Change Notification 26/June/2007 |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 900V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3290pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
November 2013
FQA11N90C_F109
N-Channel QFET ? MOSFET
900 V, 11.0 A, 1.1 Ω
Features
? 11 A, 900 V, R DS(on) = 1.1 Ω (Max.) @ V GS = 10 V, I D = 5.5 A
? Low Gate Charge (Typ. 60 nC)
? Low Crss (Typ. 23 pF)
? 100% Avalanche Tested
? RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQA11N90C_F109
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
900
11.0
6.9
V
A
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
44.0
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
960
11.0
30
4.0
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
300
2.38
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
Parameter
FQA11N90C_F109
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
0.42
40
o
o
C/W
C/W
?2006 Fairchild Semiconductor Corporation
FQA11N90C_F109 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FQA11N90F109 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET?? MOSFET 900 V, 11.4 A, 960 m?? |
| FQA11N90-F109 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel QFET?? MOSFET 900 V, 11.4 A, 960 m?? |
| FQA12N60 | 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA12P20 | 功能描述:MOSFET 200V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA13N50 | 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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