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| 型号： | FQA140N10 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 140A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 140A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 70A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 285nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7900pF @ 25V |
| 功率 - 最大： | 375W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
November 2013
FQA140N10
N -Channel QFET ? MOSFET
10 0 V, 140 A, 1 0 m?
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
Features
? 140 A, 10 0 V, R DS(on) = 1 0 m ? (Max.) @ V GS = 10 V,
I D = 7 0 A
? Low Gate Charge (Typ. 0 nC)
? Low Crss (Typ. 4 7 0 pF)
? 100% Avalanche Tested
? 1 7
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA140N10
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
140
99
A
A
I DM
Drain Current
- Pulsed
(Note 1)
560
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1500
140
37.5
6.5
375
2.5
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds .
-55 to +175
300
°C
°C
Thermal Characteristics
+ θ
+ θ
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQA140N10
0.4
40
6 ?
6 ?
?200 0 Fairchild Semiconductor Corporation
FQA140N10 Rev. C 1
1
www.fairchildsemi.com
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