- 您现在的位置：买卖IC网 > PDF目录18725 > FQA36P15 (Fairchild Semiconductor)MOSFET P-CH 150V 36A TO-3P PDF资料下载
参数资料
| 型号： | FQA36P15 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 150V 36A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 105nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3320pF @ 25V |
| 功率 - 最大： | 294W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
December 2013
FQA36P15
P-Channel QFET? MOSFET
?150 V, -36 A, 90 mΩ
Features
Description
? Low Gate Charge (Typ. 81 nC)
? 100% Avalanche Tested
? - 3 6 A, - 150 V, R DS(on) = 90 m Ω (Max) @V GS = - 10 V, I D = - 1 8 A This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
? Low Crss ( Typ. 110 pF) technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
? 175 ° C Maximum Junction Temperature Rating switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
S
G
G
D
S
TO-3PN
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA36P15
-150
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-36
-25.5
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-144
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1400
-36
29.4
-5.0
294
1.96
-55 to +175
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA36P15
0.51
0.24
40
Unit
°C / W
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQA36P15 Rev C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| B82801C2245A200 | TRANSF CURRENT SENSE 22.4MH SMD |
| IXTX60N50L2 | MOSFET N-CH 60A 500V PLUS247 |
| B82801C0565A100 | TRANSF CURRENT SENSE 5.6MH SMD |
| CMPA0060002F | TRANS RF GAN HEMT MMIC 780019PKG |
| B82801B803A20 | TRANSF CURRENT SENSE 80UH SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FQA36P15 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FQA36P15_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V P-Channel MOSFET |
| FQA36P15_F109 | 功能描述:MOSFET 150V P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA38N30 | 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FQA38N40 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET |
发布紧急采购，3分钟左右您将得到回复。