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参数资料
| 型号： | FQA36P15 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 150V 36A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 105nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3320pF @ 25V |
| 功率 - 最大： | 294W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FQA36P15
Top Mark
FQA36P15
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Off Characteristics
BV DSS
? BV DSS /
? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25°C
V DS = -150 V, V GS = 0 V
V DS = -120 V, T C = 150°C
V GS = -25 V, V DS = 0 V
V GS = 25 V, V DS = 0 V
-150
--
--
--
--
--
--
-0.13
--
--
--
--
--
--
-10
-100
-100
100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V DS = V GS , I D = -250 μ A
V GS = -10 V, I D = -18 A
V DS = -40 V, I D = -18 A
-2.0
--
--
--
0.076
19.5
-4.0
0.09
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
2550
710
110
3320
920
140
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -75 V, I D = -36 A,
R G = 25 ?
V DS = -120 V, I D = -36 A,
V GS = -10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
50
350
155
150
81
19
42
110
710
320
310
105
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
-36
-144
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -36 A
V GS = 0 V, I S = -36 A,
dI F / dt = 100 A/ μ s
--
--
--
--
198
1.45
-4.0
--
--
V
ns
μ C
N otes :
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.45 mH, I AS = -36 A, V DD = - 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ -36 A, di/dt ≤ 3 00 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2000 Fairchild Semiconductor Corporation
FQA36P15 Rev C1
2
www.fairchildsemi.com
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| FQA36P15 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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