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参数资料
| 型号： | FQA90N15_F109 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 90A TO-3P |
| 标准包装： | 30 |
| 系列： | QFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 45A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 285nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8700pF @ 25V |
| 功率 - 最大： | 375W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
December 2013
FQA90N15 _F109
N-Channel QFET? MOSFET
150 V, 9 0 A, 18 mΩ
Features
? R DS(on) = 18 m Ω (Max.) @ V GS = 10 V , I D = 4 5 A
? Low G ate C harge ( T yp . 220 nC)
? Low Crss ( T yp . 200 pF)
? 100% A valanche T ested
? 175°C Maximum Junction Memperature Rating
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA90N15 _F109
150
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
90
63.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
360
± 25
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1400
90
37.5
6.0
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate A bove 25 ° C
375
2.5
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA90N15 _F109
0.4
0.24
40
Unit
° C/W
° C/W
° C/W
?2000 Fairchild Semiconductor Corporation
FQA90N15_F109 Rev C1
1
www.fairchildsemi.com
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