参数资料
型号: FQA9N90_F109
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 900V 8.6A TO-3P
标准包装: 30
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 900V
电流 - 连续漏极(Id) @ 25° C: 8.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.3 欧姆 @ 4.3A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 72nC @ 10V
输入电容 (Ciss) @ Vds: 2700pF @ 25V
功率 - 最大: 240W
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3PN
包装: 管件
November 2013
FQA9N90_F109
N-Channel QFET ? MOSFET
900 V, 8.6 A, 1 .3 ?
Features
? 8.6 A, 900 V, R DS(on) = 1.3 ? (Max.) @ V GS = 10 V , I D = 4.3 A
? Low G ate C harge ( T yp . 55 nC)
? Low Crss ( T yp . 25 pF)
? 100% A valanche T ested
? RoHS C ompliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA9N90_F109
900
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
8.6
5.45
A
A
I DM
Drain Current
- Pulsed
(Note 1)
34.4
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate A bove 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
900
8.6
24
4.0
240
1.92
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA9N90_F109
0.52
0.24
40
Unit
°C / W
°C / W
°C / W
?2007 Fairchild Semiconductor Corporation
FQA9N90_F109 Rev. C1
1
www.fairchildsemi.com
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