参数资料
型号: FQA9N90_F109
厂商: Fairchild Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 900V 8.6A TO-3P
标准包装: 30
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 900V
电流 - 连续漏极(Id) @ 25° C: 8.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.3 欧姆 @ 4.3A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 72nC @ 10V
输入电容 (Ciss) @ Vds: 2700pF @ 25V
功率 - 最大: 240W
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3PN
包装: 管件
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top :
V GS
15.0 V
10.0 V
10
10
150 C
1
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
o
10
10
25 C
-55 C
10
0
-1
※ Notes :
1. 250μs Pulse Test
2. T C = 25 ℃
0
o
o
※ Notes :
1. V DS = 50V
2. 250μs Pulse Test
10
10
10
10
-1
0
1
-1
2
4
6
8
10
V DS , Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
V GS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.4
10
10
2.1
1.8
1.5
V GS = 10V
V GS = 20V
1
0
1.2
※ Note : T J = 25 ℃
150 ℃
25 ℃
※ Notes :
1. V GS = 0V
2. 250μs Pulse Test
10
0.9
0
5
10
15
20
25
30
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
4000
3000
C iss
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
12
10
V DS = 180V
V DS = 450V
8
V DS = 720V
2000
C oss
6
1000
C rss
※ Notes :
1. V GS = 0 V
2. f = 1 MHz
4
2
※ Note : I D = 8.6 A
10
10
10
0
-1
0
1
0
0
10
20
3 0
4 0
5 0
60
V DS , Drain-Source Voltage [V]
Q G , Total Gate Charge [nC]
?2007 Fairchild Semiconductor Corporation
FQA9N90_F109 Rev. C1
3
www.fairchildsemi.com
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