参数资料
型号: FQAF13N80
厂商: Fairchild Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH 800V 8A TO-3PF
产品培训模块: High Voltage Switches for Power Processing
标准包装: 30
系列: QFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 750 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 88nC @ 10V
输入电容 (Ciss) @ Vds: 3500pF @ 25V
功率 - 最大: 120W
安装类型: 通孔
封装/外壳: SC-94
供应商设备封装: TO-3PF
包装: 管件
Mechanical Dimensions
Figure 16 . TO3PF, Molded, 3 -Lead , Full Pack (AG)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF3PF-003
?2001 Fairchild Semiconductor Corporation
FQAF13N80 Rev. C1
7
www.fairchildsemi.com
相关PDF资料
PDF描述
FQAF16N50 MOSFET N-CH 500V 11.3A TO-3PF
FQB11P06TM MOSFET P-CH 60V 11.4A D2PAK
FQB12P20TM MOSFET P-CH 200V 11.5A D2PAK
FQB19N20LTM MOSFET N-CH 200V 21A D2PAK
FQB22P10TM_F085 MOSFET P-CH 100V 22A D2PAK
相关代理商/技术参数
参数描述
FQAF14N30 功能描述:MOSFET N-CH/300V/11.4A/0.29OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQAF15N70 功能描述:MOSFET 700V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQAF16N25 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQAF16N25C 功能描述:MOSFET 250V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FQAF16N50 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube